FCD5N60TF
MOSFET N-CH 600V 4.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi SuperFET™ FCD5N60TF is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 4.6A at 25°C. With a maximum power dissipation of 54W at 25°C, it is suitable for demanding power conversion circuits. The Rds On is specified at a maximum of 950mOhm at 2.3A and 10V gate drive. Key parameters include a gate charge (Qg) of 16 nC at 10V and input capacitance (Ciss) of 600 pF at 25V. The device utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This MOSFET is frequently employed in power supplies, lighting, and industrial motor control applications.
Additional Information
Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
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