FCD4N60TF
MOSFET N-CH 600V 3.9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCD4N60TF is a SuperFET™ N-Channel Power MOSFET designed for demanding applications. This TO-252AA packaged component features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 3.9A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.2 Ohms at 2A and 10V gate drive, it offers efficient power switching. Key parameters include a gate charge (Qg) of 16.6 nC and input capacitance (Ciss) of 540 pF, both at specified drive conditions. The device supports a maximum power dissipation of 50W (Tc) and operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply, lighting, and industrial motor control applications.
Additional Information
Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V |
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