FCB36N60NTM
MOSFET N-CH 600V 36A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi SupreMOS™ FCB36N60NTM is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 36A at 25°C (Tc). With a low on-resistance (Rds On) of 90mOhm maximum at 18A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 312W (Tc) and a gate charge (Qg) of 112 nC at 10V. The input capacitance (Ciss) is rated at 4785 pF maximum at 100V. Packaged in a TO-263-3, D2PAK surface mount configuration, it is suitable for demanding applications in power supplies, motor control, and lighting. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SupreMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 312W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4785 pF @ 100 V |
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