FCB20N60F-F085
MOSFET N-CH 600V 20A TO263ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FCB20N60F-F085 is a SuperFET™ series N-Channel Power MOSFET designed for high-efficiency applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 20 A at 25°C, with a maximum power dissipation of 405 W. The Rds On is specified at a maximum of 195 mOhm at 20 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 102 nC at 10 V and input capacitance (Ciss) of 2035 pF at 25 V. The device is qualified to AEC-Q101 standards, indicating its suitability for automotive applications. It is supplied in a TO-263AB (D2PAK) surface mount package, presented on tape and reel. This MOSFET technology is utilized in power supply designs and electric vehicle systems.
Additional Information
Series: SuperFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 405W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2035 pF @ 25 V |
| Qualification | AEC-Q101 |
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