FCB11N60FTM
MOSFET N-CH 600V 11A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FCB11N60FTM, a SuperFET™ series N-Channel Power MOSFET, offers a 600V drain-source voltage and 11A continuous drain current at 25°C (Tc). This device features a low on-resistance of 380mOhm at 5.5A and 10V Vgs, with a gate charge of 52 nC (max) at 10V. The input capacitance (Ciss) is 1490 pF (max) at 25V. Designed for efficient power conversion, it is packaged in a TO-263-3, D2PAK surface mount configuration, allowing for robust thermal management with a power dissipation of 125W (Tc). The FCB11N60FTM is suitable for applications in power supplies, motor control, and lighting. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 25 V |
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