FCA76N60N
MOSFET N-CH 600V 76A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SupreMOS™ FCA76N60N is an N-Channel Power MOSFET designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 76A at 25°C, this component offers a low On-Resistance (Rds On) of 36mOhm at 38A and 10V Vgs. The device is packaged in a TO-3PN (TO-3P-3, SC-65-3) through-hole package, supporting a maximum power dissipation of 543W at 25°C. Key parameters include a Gate Charge (Qg) of 285 nC at 10V and an input capacitance (Ciss) of 12385 pF at 100V. The operating temperature range is from -55°C to 150°C. This MOSFET technology is suitable for use in power factor correction, switch mode power supplies, and industrial motor control applications.
Additional Information
Series: SupreMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 543W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 285 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12385 pF @ 100 V |
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