FCA35N60
MOSFET N-CH 600V 35A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET™ FCA35N60 is a 600V N-Channel MOSFET in a TO-3PN package. This device features a continuous drain current of 35A at 25°C (Tc) and a maximum power dissipation of 312.5W (Tc). With a low on-resistance of 98mOhm at 17.5A and 10V Vgs, it offers efficient power switching. Key parameters include a gate charge of 181 nC at 10V and an input capacitance of 6640 pF at 25V. The FCA35N60 is suitable for applications in power supplies, motor control, and lighting. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±30V.
Additional Information
Series: SuperFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 312.5W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 181 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6640 pF @ 25 V |
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