FCA22N60N
MOSFET N-CH 600V 22A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SupreMOS™ FCA22N60N is a 600 V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a continuous drain current capability of 22A at 25°C (Tc) and a maximum power dissipation of 205W (Tc). Its low Rds(on) of 165mOhm at 11A and 10V gate drive ensures minimal conduction losses. The FCA22N60N boasts low gate charge (Qg) of 45 nC at 10V and an input capacitance (Ciss) of 1950 pF at 100V, contributing to efficient switching performance. Packaged in a TO-3PN (TO-3P-3, SC-65-3) through-hole configuration, this MOSFET is suitable for demanding applications in power supply, industrial motor control, and lighting sectors. It operates reliably within an extended temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±30V.
Additional Information
Series: SupreMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 205W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 100 V |
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