FCA20N60FS
MOSFET N-CH 600V 20A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi SuperFET™ N-Channel MOSFET, part number FCA20N60FS, offers a 600V drain-source voltage with continuous drain current capability of 20A at 25°C. This through-hole TO-3PN packaged device features a low on-resistance of 190mOhm maximum at 10A, 10V, and a gate charge of 98 nC maximum at 10V. Its high power dissipation of 208W at 25°C (Tc) makes it suitable for demanding applications. The FCA20N60FS utilizes advanced MOSFET technology, supporting a gate-source voltage range of ±30V and an operating temperature of -55°C to 150°C. This component is widely employed in power supply units, motor control, and industrial power applications.
Additional Information
Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3080 pF @ 25 V |
Request a Quote
Clients Also Buy
FCD5N60TM
MOSFET N-CH 600V 4.6A DPAK
FCB20N60FTM
MOSFET N-CH 600V 20A D2PAK
FCD5N60TM-WS
MOSFET N-CH 600V 4.6A DPAK
