FCA16N60N
MOSFET N-CH 600V TO-3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SupreMOS® FCA16N60N is a 600V N-Channel Power MOSFET designed for demanding applications. This through-hole component features a continuous drain current of 16A at 25°C (Tc) and a maximum power dissipation of 134.4W (Tc). With a low Rds(on) of 199mOhm at 8A and 10V, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 52.3 nC (max) at 10V and input capacitance (Ciss) of 2170 pF (max) at 100V. The FCA16N60N is housed in a TO-3PN package and operates across a wide temperature range from -55°C to 150°C (TJ). This device is commonly utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: SupreMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 134.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 100 V |
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