FCA16N60
MOSFET N-CH 600V 16A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET™ MOSFET FCA16N60 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a Drain to Source Voltage (Vdss) of 600 V and a continuous Drain current (Id) of 16A at 25°C (Tc), with a maximum power dissipation of 167W (Tc). The Rds On is specified at a maximum of 260mOhm at 8A and 10V gate drive. Key parameters include a gate charge (Qg) of 70 nC at 10V and input capacitance (Ciss) of 2250 pF at 25V. The FCA16N60 is housed in a TO-3PN package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This device is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 25 V |
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