EMH2801-TL-H
MOSFET P-CH 20V 3A 8EMHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi EMH2801-TL-H is a P-Channel Power MOSFET designed for demanding applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3A at 25°C. With a maximum power dissipation of 1W (Ta) in its 8-EMH package, it is suitable for surface mount configurations. The Rds(on) is specified at 85mOhm at 1.5A and 4.5V Vgs. Key electrical characteristics include a gate charge (Qg) of 4nC at 4.5V and input capacitance (Ciss) of 320pF at 10V. The device integrates a Schottky diode for enhanced performance and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 1.5A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-EMH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 320 pF @ 10 V |
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