ECH8419-TL-H
MOSFET N-CH 35V 9A 8ECHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ECH8419-TL-H is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 35V drain-to-source breakdown voltage and a continuous drain current capability of 9A at 25°C ambient temperature. With a maximum on-resistance (Rds On) of 17mOhm at 5A and 10V Vgs, it offers low conduction losses. The device supports gate drive voltages from 4V to 10V for optimal performance. Key electrical characteristics include a maximum gate charge (Qg) of 19 nC at 10V and a maximum input capacitance (Ciss) of 960 pF at 20V. It is housed in an 8-ECH package, suitable for surface mounting, and operates across a wide temperature range up to 150°C (TJ). The ECH8419-TL-H is commonly utilized in power management solutions across various industrial and consumer electronics segments. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 8-ECH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 35 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 20 V |
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