ECH8411-TL-E
MOSFET N-CH 20V 9A 8ECHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ECH8411-TL-E is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 20V drain-source breakdown voltage and supports a continuous drain current of 9A at 25°C. The low on-resistance of 16mOhm at 4A and 4V gate-source voltage minimizes conduction losses. With a gate charge of 21nC at 4V and input capacitance of 1740pF at 10V, it offers improved switching performance. The ECH8411-TL-E is housed in an 8-ECH (8-SMD, Flat Leads) surface mount package, enabling compact board layouts. It is rated for a maximum power dissipation of 1.4W (Ta) and an operating junction temperature of 150°C. This component is commonly utilized in consumer electronics and power management systems.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 4A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1740 pF @ 10 V |
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