ECH8410-TL-H
MOSFET N-CH 30V 12A 8ECHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ECH8410-TL-H is an N-Channel MOSFET designed for power switching applications. This component features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 12 A at 25°C. With a low on-resistance of 10 mOhm at 6 A and 10 V Vgs, it offers efficient power delivery. The device has a maximum gate charge (Qg) of 31 nC at 10 V and an input capacitance (Ciss) of 1700 pF at 10 V. It operates at temperatures up to 150°C (TJ) and has a power dissipation of 1.6 W (Ta). The ECH8410-TL-H is supplied in an 8-ECH surface mount package, delivered on tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 10 V |
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