ECH8402-TL-E
MOSFET N-CH 30V 10A 8ECHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ECH8402-TL-E is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C ambient temperature, with a maximum power dissipation of 1.6W. The Rds(On) is specified at a low 15mOhm maximum at 5A and 10V Vgs. Key electrical characteristics include a maximum gate charge (Qg) of 28 nC at 10V and input capacitance (Ciss) of 1400 pF at 10V. The device utilizes MOSFET technology and is presented in an 8-SMD, Flat Leads (8-ECH) package for surface mounting. Its operating junction temperature range extends to 150°C. This component is commonly utilized in power management solutions within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 10 V |
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