ECH8320-TL-H
MOSFET P-CH 20V 9.5A 8ECHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ECH8320-TL-H is a P-Channel Power MOSFET designed for demanding applications. This component features a 20V Drain-Source voltage (Vdss) and a continuous drain current capability of 9.5A (Ta) at 25°C. The Rds(On) is specified at a maximum of 14.5mOhm at 5A and 4.5V gate drive. Key electrical parameters include a maximum gate charge (Qg) of 25 nC at 10V and an input capacitance (Ciss) of 2300 pF at 10V. Operating at a maximum junction temperature of 150°C, this MOSFET offers a power dissipation of 1.6W (Ta). It is housed in an 8-ECH (8-SMD, Flat Leads) surface mount package and is supplied on tape and reel. The ECH8320-TL-H is suitable for power management solutions across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 10 V |
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