ECH8315-TL-W
MOSFET P-CH 30V 7.5A SOT28FLManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ECH8315-TL-W is a P-Channel MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 7.5A at 25°C. The Rds(On) is specified at a maximum of 25mOhm for a Drain current of 3.5A and Gate-Source voltage of 10V. It offers a Gate Charge (Qg) of 18nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 875pF maximum at 10V Vds. With a maximum power dissipation of 1.5W (Ta) and an operating temperature up to 150°C (TJ), it is suitable for demanding environments. The component utilizes a Surface Mount configuration in an 8-SMD, Flat Leads package (SOT-28FL/ECH8), supplied on tape and reel. This MOSFET is commonly utilized in power management, battery charging, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | SOT-28FL/ECH8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 10 V |
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