ECH8309-TL-H
MOSFET P-CH 12V 9.5A 8ECHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi ECH8309-TL-H is a P-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain current (Id) of 9.5A at 25°C. With a low on-resistance (Rds On) of 16mOhm at 4.5A and 4.5V Vgs, it minimizes conduction losses. The MOSFET is housed in an 8-ECH surface mount package, suitable for automated assembly. Key electrical parameters include a gate charge (Qg) of 18 nC maximum at 4.5V and input capacitance (Ciss) of 1780 pF maximum at 6V. Its operating temperature range extends to 150°C (TJ), and it supports gate-source voltages (Vgs) up to ±10V. This component is widely utilized in power management, battery charging, and automotive systems. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 6 V |
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