ECH8305-TL-E
MOSFET P-CH 60V 4A 8ECHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi ECH8305-TL-E, a P-Channel Power MOSFET, offers a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 4 A (Ta) at 25°C. This surface mount device features a low on-resistance (Rds On) of 85 mOhm at 2 A and 10 V, with a gate charge (Qg) of 34 nC (Max) at 10 V. The input capacitance (Ciss) is 1680 pF (Max) at 20 V. With a maximum power dissipation of 1.6 W (Ta) and an operating temperature up to 150°C (TJ), the ECH8305-TL-E is suitable for applications in power management and general switching. The component is provided in an 8-ECH package for surface mounting.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-ECH |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 20 V |
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