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CPH6445-TL-W

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CPH6445-TL-W

MOSFET N-CH 60V 3.5A 6CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi CPH6445-TL-W is an N-Channel Power MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 3.5A at 25°C (Ta). With a maximum power dissipation of 1.6W (Ta), it is suitable for demanding applications. The Rds On is specified at a maximum of 117mOhm at 1.5A and 10V Vgs. Key electrical characteristics include a Gate Charge (Qg) of 6.8 nC (max) at 10V and an Input Capacitance (Ciss) of 310 pF (max) at 20V Vds. The device operates at junction temperatures up to 150°C and is supplied in a 6-CPH package, commonly known as SOT-23-6, on tape and reel. Its robust specifications make it a viable option for power management solutions in various electronics, including automotive and industrial systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs117mOhm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package6-CPH
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds310 pF @ 20 V

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