CPH6443-TL-W
MOSFET N-CH 35V 6A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH6443-TL-W is an N-Channel Power MOSFET designed for efficient switching applications. This device features a drain-source voltage (Vdss) of 35V and a continuous drain current (Id) capability of 6A at 25°C. With a maximum on-resistance (Rds On) of 37mOhm at 3A and 10V Vgs, it offers low conduction losses. The gate charge (Qg) is a maximum of 10 nC at 10V, and input capacitance (Ciss) is 470 pF at 20V. The CPH6443-TL-W operates with a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 2.6V at 1mA. It is housed in a compact 6-CPH (SOT-23-6 Thin) surface mount package, suitable for high-density board designs. The component supports a maximum power dissipation of 1.6W and can operate at junction temperatures up to 150°C. This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 6-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 35 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 20 V |
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