CPH6442-TL-W
MOSFET N-CH 60V 6A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi CPH6442-TL-W is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current (Id) capability of 6A at 25°C. The Rds(On) is specified at a maximum of 43mOhm at 3A and 10V gate drive. Key parameters include a gate charge (Qg) of 20 nC maximum at 10V and an input capacitance (Ciss) of 1040 pF maximum at 20V. It supports a wide gate drive voltage range from 4V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. The device operates at a junction temperature up to 150°C and has a maximum power dissipation of 1.6W. The CPH6442-TL-W is supplied in a 6-CPH package (SOT-23-6 Thin, TSOT-23-6) suitable for surface mounting and is provided on tape and reel. This MOSFET is utilized in power management solutions across various industries including consumer electronics, industrial automation, and automotive.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 6-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 20 V |
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