CPH6442-TL-E
MOSFET N-CH 60V 6A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH6442-TL-E is an N-Channel MOSFET designed for efficient power switching. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. With a maximum gate-source voltage (Vgs) of ±20V, it offers robust gate protection. The device exhibits a low on-resistance (Rds On) of 43mOhm at 3A and 10Vgs, ensuring minimal power loss during conduction. Key parameters include a gate charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 1040 pF at 20V. The power dissipation is rated at 1.6W (Ta) with an operating junction temperature of 150°C. Mounted in a 6-CPH (SOT-23-6) package, this MOSFET is suitable for surface mounting and is supplied on tape and reel. Its characteristics make it applicable in various industrial and consumer electronics power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 6-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 20 V |