CPH6434-TL-E
MOSFET N-CH 30V 6A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH6434-TL-E is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 6A at 25°C. With a low on-resistance of 41mOhm at 3A and 4V, it minimizes conduction losses. The device offers a gate charge (Qg) of 7nC at 4V and an input capacitance (Ciss) of 790pF at 10V. Rated for a maximum power dissipation of 1.6W (Ta), it operates within a junction temperature range of 150°C. The CPH6434-TL-E is housed in a compact 6-CPH (SOT-23-6 Thin, TSOT-23-6) surface-mount package, suitable for demanding applications in power management, consumer electronics, and industrial controls.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 3A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-CPH |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 10 V |
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