CPH6429-TL-E
MOSFET N-CH 60V 2A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi CPH6429-TL-E, a N-Channel MOSFET, offers a 60V drain-source breakdown voltage and a continuous drain current capability of 2A at 25°C. This device features a low on-resistance of 220mOhm maximum at 1A, 4V, and a nominal gate charge of 4.2 nC at 4V. The input capacitance (Ciss) is specified at a maximum of 325 pF at 20V. Designed for surface mounting, it is housed in a 6-CPH package, also known as SOT-23-6 Thin or TSOT-23-6. The maximum power dissipation is 1.6W at 25°C ambient temperature, with an operating junction temperature up to 150°C. This component is suitable for applications in power management and general switching within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 1A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-CPH |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 20 V |
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