CPH6354-TL-W
MOSFET P-CH 60V 4A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET, CPH6354-TL-W, offers a 60V drain-source voltage and a continuous drain current of 4A (Ta). This device features a low on-resistance of 100mOhm at 2A and 10V, with a 4V to 10V drive voltage range for optimal Rds(on) performance. It has a gate charge of 14 nC (max) at 10V and an input capacitance of 600 pF (max) at 20V. The CPH6354-TL-W is supplied in a 6-CPH (SOT-23-6) surface mount package and supports a maximum power dissipation of 1.6W (Ta). Operating at a junction temperature up to 150°C, this MOSFET is suitable for applications in power management and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 6-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 20 V |
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