CPH6354-TL-H
MOSFET P-CH 60V 4A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi CPH6354-TL-H is a P-Channel Power MOSFET designed for surface-mount applications. This component offers a Drain-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 4A at 25°C. It features a low on-resistance (Rds On) of 100mOhm at 2A and 10V, with a gate drive range of 4V to 10V. The device has a maximum power dissipation of 1.6W (Ta) and an operating temperature range up to 150°C (TJ). Key electrical parameters include a maximum gate charge (Qg) of 14 nC at 10V and an input capacitance (Ciss) of 600pF at 20V. The CPH6354-TL-H is supplied in a 6-CPH (SOT-23-6) package, presented on a tape and reel. This MOSFET is utilized across various industries requiring efficient power switching and control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 20 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
