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CPH6347-TL-W

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CPH6347-TL-W

MOSFET P-CH 20V 6A 6CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi CPH6347-TL-W is a P-Channel Power MOSFET designed for efficient power management. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 6A at 25°C, with a maximum power dissipation of 1.6W. The device offers a low on-resistance (Rds On) of 39mOhm at 3A and 4.5V, supported by drive voltages ranging from 1.8V to 4.5V. Key electrical characteristics include a Gate Charge (Qg) of 10.5 nC and an input capacitance (Ciss) of 860 pF. Operating at junction temperatures up to 150°C, the CPH6347-TL-W is housed in a 6-CPH (SOT-23-6 Thin) surface mount package, supplied on tape and reel. This MOSFET is utilized in applications such as consumer electronics, industrial control, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs39mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id1.4V @ 1mA
Supplier Device Package6-CPH
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds860 pF @ 10 V

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