CPH6347-TL-H
MOSFET P-CH 20V 6A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH6347-TL-H is a P-Channel MOSFET featuring a drain-to-source voltage (Vdss) of 20 V and continuous drain current (Id) of 6 A at 25°C. This device offers a low on-resistance (Rds On) of 39 mOhm at 3 A and a gate-source voltage (Vgs) of 4.5 V. With a maximum power dissipation of 1.6 W (Ta) and an operating junction temperature of 150°C, it is suitable for applications requiring efficient power switching. The gate charge (Qg) is 10.5 nC at 4.5 V, and input capacitance (Ciss) is 860 pF at 10 V. This MOSFET utilizes Metal Oxide technology and is provided in a 6-CPH (SOT-23-6) package, supplied on tape and reel. It finds application in consumer electronics and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 10 V |