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CPH6341-TL-EX

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CPH6341-TL-EX

MOSFET P-CH 30V 5A 6CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi CPH6341-TL-EX is a P-Channel MOSFET designed for power management applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 5A at 25°C ambient temperature. The device offers a low on-resistance (Rds On) of 59mOhm at 3A and 10V Vgs, enabling efficient switching. It supports a gate-source voltage range of ±20V and requires a drive voltage between 4V and 10V for optimal performance. With a maximum power dissipation of 1.6W (Ta), it is suitable for surface mount installations in a 6-CPH (SOT-23-6 Thin, TSOT-23-6) package, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 10 nC at 10V and input capacitance (Ciss) of 430 pF at 10V. This MOSFET is utilized across various industries including automotive, consumer electronics, and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs59mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package6-CPH
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 10 V

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