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CPH6341-TL-E

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CPH6341-TL-E

MOSFET P-CH 30V 5A 6CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi CPH6341-TL-E is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 5A at 25°C. It offers a maximum On-Resistance (Rds On) of 59mOhm at 3A and 10V gate drive. The device supports gate drive voltages from 4V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. With an input capacitance (Ciss) of 430 pF and a gate charge (Qg) of 10 nC, it is suitable for various power management applications. The operating junction temperature reaches 150°C, with a maximum power dissipation of 1.6W. Packaged in a Tape & Reel (TR) format within a 6-CPH (SOT-23-6) case, this MOSFET is utilized in industries such as automotive and industrial control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs59mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package6-CPH
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 10 V

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