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CPH6337-TL-W

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CPH6337-TL-W

MOSFET P-CH 12V 3.5A 6CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi CPH6337-TL-W is a P-Channel MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 12 V and a continuous Drain current (Id) of 3.5A at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 70mOhm at 1.5A and 4.5V Vgs, with a Gate Charge (Qg) of 5.6 nC at 4.5V. It supports a Gate-Source Voltage (Vgs) range of ±10V and has a threshold voltage (Vgs(th)) of 1.4V at 1mA. The CPH6337-TL-W is housed in a 6-CPH (SOT-23-6 Thin) surface mount package and operates at junction temperatures up to 150°C. Power dissipation is rated at 1.6W. This MOSFET is commonly utilized in consumer electronics, industrial control, and power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs70mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id1.4V @ 1mA
Supplier Device Package6-CPH
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds405 pF @ 6 V

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