CPH6337-TL-E
MOSFET P-CH 12V 3.5A 6CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi CPH6337-TL-E is a P-Channel Power MOSFET designed for applications requiring efficient switching. This device features a drain-source breakdown voltage (Vdss) of 12V and a continuous drain current (Id) of 3.5A at 25°C (Ta). The on-resistance (Rds On) is specified at a maximum of 70mOhm for a drain current of 1.5A and gate-source voltage of 4.5V, with drive voltages ranging from 1.8V to 4.5V. Key parameters include a gate charge (Qg) of 5.6 nC (max) at 4.5V and input capacitance (Ciss) of 405 pF (max) at 6V. The component is housed in a 6-CPH (SOT-23-6) surface-mount package and supports a maximum junction temperature of 150°C, with a power dissipation of 1.6W (Ta). This MOSFET is commonly utilized in consumer electronics, industrial power supplies, and battery management systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 6-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 405 pF @ 6 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
