CPH5871-TL-W
MOSFET N-CH 30V 3.5A 5CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH5871-TL-W is an N-Channel Power MOSFET designed for efficient switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 3.5A at 25°C ambient temperature. With a low on-resistance of 52mOhm maximum at 2A and 4.5V Vgs, it minimizes conduction losses. The MOSFET incorporates an integrated Schottky diode, providing improved reverse recovery characteristics. Key parameters include a gate charge of 4.7 nC maximum at 4.5V Vgs and input capacitance of 430 pF maximum at 10V Vds. It is supplied in a compact 5-CPH (SC-74A, SOT-753) surface mount package, accommodating a maximum power dissipation of 900mW. The CPH5871-TL-W is suitable for use in power management solutions across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74A, SOT-753 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 125°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 2A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 5-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
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