CPH3462-TL-W
MOSFET N-CH 100V 1A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH3462-TL-W is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 1A at 25°C. With a maximum Rds(on) of 785mOhm at 1A and 10V Vgs, it offers low conduction losses. The MOSFET is housed in a compact 3-CPH (TO-236-3, SC-59, SOT-23-3) surface mount package, suitable for space-constrained designs. Key parameters include a Gate Charge (Qg) of 3.4 nC at 10V and an Input Capacitance (Ciss) of 155 pF at 20V. The maximum power dissipation is 1W (Ta), and it operates within an ambient temperature range up to 150°C (TJ). This component is widely utilized in power management circuits for consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 785mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 155 pF @ 20 V |
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