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CPH3461-TL-W

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CPH3461-TL-W

MOSFET N-CH 250V 350MA 3CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi CPH3461-TL-W is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain current (Id) of 350 mA at 25°C. Its Rds On is specified at a maximum of 6.5 Ohms at 170 mA and 4.5 V, with a gate threshold voltage (Vgs(th)) of 1.3 V at 1 mA. The device offers a low gate charge (Qg) of 2.1 nC typical at 4.5 V and an input capacitance (Ciss) of 140 pF maximum at 20 V. The CPH3461-TL-W is housed in a compact 3-CPH (TO-236-3, SC-59, SOT-23-3) surface mount package, suitable for high-density designs. It supports gate drive voltages from 2.5 V to 4.5 V and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, consumer electronics, and industrial control systems. The part is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C350mA (Ta)
Rds On (Max) @ Id, Vgs6.5Ohm @ 170mA, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.3V @ 1mA
Supplier Device Package3-CPH
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 20 V

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