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CPH3461-TL-H

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CPH3461-TL-H

MOSFET N-CH 250V 350MA 3CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi CPH3461-TL-H is an N-Channel MOSFET designed for robust performance in demanding applications. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous drain current capability of 350mA at 25°C, with a maximum power dissipation of 1W. The Rds On is specified at a maximum of 6.5 Ohms when driven at 170mA and 4.5V Vgs. Key parameters include a Gate Charge (Qg) of 2.1 nC at 4.5V Vgs and an Input Capacitance (Ciss) of 140 pF at 20V Vds. The threshold voltage (Vgs(th)) is 1.3V at 250µA. This component utilizes Metal Oxide technology and is housed in a surface mount 3-CPH package (TO-236-3, SC-59, SOT-23-3), supplied on tape and reel. The operating temperature range extends to 150°C (TJ). This MOSFET is suitable for power management and switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C350mA (Ta)
Rds On (Max) @ Id, Vgs6.5Ohm @ 170mA, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.3V @ 250µA
Supplier Device Package3-CPH
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 20 V

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