CPH3459-TL-W
MOSFET N-CH 200V 500MA 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH3459-TL-W is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 500mA at 25°C, with a maximum power dissipation of 1W. The Rds(On) is rated at a maximum of 3.7 Ohms at 250mA and 10V gate drive. Key characteristics include a gate charge (Qg) of 2.4 nC and input capacitance (Ciss) of 90 pF at 20V. The device operates within a temperature range of -55°C to 150°C and is supplied in a 3-CPH (TO-236-3, SC-59, SOT-23-3) surface mount package on tape and reel. The CPH3459-TL-W is suitable for use in power management, telecommunications, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 20 V |
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