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CPH3456-TL-H

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CPH3456-TL-H

MOSFET N-CH 20V 3.5A 3CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi CPH3456-TL-H is a N-Channel Power MOSFET designed for efficient power switching applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 3.5A (Ta). It offers a low on-resistance of 71mOhm maximum at 1.5A and 4.5V Vgs, with a drive voltage range of 1.8V to 4.5V. The device supports a maximum junction temperature of 150°C and has a power dissipation of 1W (Ta). Key characteristics include an input capacitance (Ciss) of 260pF (Max) at 10V and a gate charge (Qg) of 2.8nC at 4.5V. The CPH3456-TL-H is supplied in a compact 3-CPH (TO-236-3, SC-59, SOT-23-3) surface mount package, available on tape and reel. This MOSFET is suitable for use in consumer electronics, industrial automation, and power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs71mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package3-CPH
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 10 V

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