CPH3455-TL-W
MOSFET N-CH 35V 3A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH3455-TL-W is an N-Channel MOSFET designed for demanding applications. This component features a 35V drain-source breakdown voltage and a continuous drain current rating of 3A at 25°C. The Rds(On) is specified at a maximum of 104mOhm when driven at 1.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 4nC (max) at 10V and input capacitance (Ciss) of 186pF (max) at 20V Vds. With a maximum power dissipation of 1W (Ta) and an operating junction temperature up to 150°C, this MOSFET is suitable for surface mount integration. It is supplied in a compact 3-CPH package, often found in consumer electronics and industrial control systems. The gate-source voltage (Vgs) limits are ±20V, with a threshold voltage (Vgs(th)) maximum of 2.6V at 1mA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 35 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 186 pF @ 20 V |
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