CPH3427-TL-E
MOSFET N-CH 100V 1A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi CPH3427-TL-E is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 1A at 25°C, with a maximum power dissipation of 1W (Ta). The MOSFET exhibits a typical Rds On of 630mOhm at 500mA and 10V gate-source voltage. Key characteristics include a gate charge of 6.5 nC (Max) at 10V and an input capacitance of 240 pF (Max) at 20V. The CPH3427-TL-E is housed in a compact 3-CPH (SC-96) surface-mount package, suitable for demanding thermal environments with an operating temperature up to 150°C. This component finds application in various industrial and consumer electronics sectors requiring robust power management solutions.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-CPH |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 20 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
