CPH3362-TL-W
MOSFET P-CH 100V 700MA 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi CPH3362-TL-W is a P-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 700mA at 25°C, with a maximum power dissipation of 1W. The Rds On is specified at a maximum of 1.7 Ohms when conducting 700mA with a gate-source voltage (Vgs) of 10V. Drive voltages range from 4V to 10V. Key electrical characteristics include a gate charge (Qg) of 3.7 nC and an input capacitance (Ciss) of 142 pF at 20V. The device operates at junction temperatures up to 150°C and is housed in a compact 3-CPH (TO-236-3, SC-59, SOT-23-3) surface mount package, supplied on tape and reel. This MOSFET is suitable for use in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 142 pF @ 20 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
