CPH3360-TL-W
MOSFET P-CH 30V 1.6A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH3360-TL-W is a P-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 1.6A at 25°C. With a maximum power dissipation of 900mW (Ta), it is suitable for demanding thermal environments. The Rds On is specified at a maximum of 303mOhm when conducting 800mA with a 10V gate-source voltage. Key parameters include a gate charge (Qg) of 2.2 nC (max) and input capacitance (Ciss) of 82 pF (max) at 10V. The CPH3360-TL-W utilizes a TO-236-3, SC-59, SOT-23-3 package, commonly referred to as 3-CPH, and is supplied on tape and reel. This MOSFET finds application in power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 303mOhm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 82 pF @ 10 V |
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