CPH3360-TL-H
MOSFET P-CH 30V 1.6A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH3360-TL-H is a P-Channel MOSFET designed for power management applications. It features a 30V drain-source breakdown voltage and a continuous drain current capability of 1.6A at 25°C ambient temperature. This device offers a maximum on-resistance of 303mOhm at 800mA drain current and 10V gate-source voltage. The CPH3360-TL-H is housed in a 3-CPH (TO-236-3, SC-59, SOT-23-3) surface-mount package, supporting a maximum power dissipation of 900mW at 25°C ambient. Key parameters include a gate charge of 2.2 nC and input capacitance of 82 pF at 10V Vgs. This MOSFET is suitable for use in portable electronics and power control circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 303mOhm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 82 pF @ 10 V |
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