CPH3356-TL-W
MOSFET P-CH 20V 2.5A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH3356-TL-W is a P-Channel MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 2.5 A at 25°C, with a maximum power dissipation of 1 W. The CPH3356-TL-W offers a low Rds On of 137 mOhm at 1 A and 4.5 V, supported by a gate drive voltage range of 1.8 V to 4.5 V. It has a maximum gate charge (Qg) of 3.3 nC at 4.5 V and an input capacitance (Ciss) of 250 pF at 10 V. Packaged in a surface mount 3-CPH (TO-236-3, SC-59, SOT-23-3) format and supplied on tape and reel, this MOSFET is suitable for use in consumer electronics and industrial automation. The operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
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