CPH3356-TL-H
MOSFET P-CH 20V 2.5A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi CPH3356-TL-H is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.5A at 25°C. The Rds(On) is specified at a maximum of 137mOhm at 1A and 4.5V Vgs. With a powerdissipation of 1W (Ta), it is suitable for surface mount applications in a TO-236-3, SC-59, SOT-23-3 package, supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 3.3 nC (max) at 4.5V and Input Capacitance (Ciss) of 250 pF (max) at 10V. The operating temperature range extends to 150°C (TJ). This component is utilized in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
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