CPH3351-TL-W
MOSFET P-CH 60V 1.8A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi CPH3351-TL-W is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 1.8A at 25°C. With a maximum power dissipation of 1W, it is suitable for surface mount configurations within the TO-236-3, SC-59, SOT-23-3 (3-CPH) package, supplied on tape and reel. The Rds On is specified at a maximum of 250mOhm at 1A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 6nC at 10V and an input capacitance (Ciss) of 262pF at 20V. The operating temperature range extends to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.6V at 1mA. This MOSFET technology is utilized in power management and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 3-CPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 262 pF @ 20 V |
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