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CPH3348-TL-E

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CPH3348-TL-E

MOSFET P-CH 12V 3A 3CPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi P-Channel Power MOSFET, CPH3348-TL-E, offers a 12V drain-source breakdown voltage and continuous drain current capability of 3A at 25°C ambient. This device features a low on-resistance of 70mOhm maximum at 1.5A and 4.5V Vgs, with a gate charge of 5.6 nC maximum at 4.5V. The input capacitance (Ciss) is 405 pF maximum at 6V Vds. Designed for surface mount applications, the CPH3348-TL-E is housed in a TO-236-3, SC-59, SOT-23-3 package, also known as 3-CPH. It supports gate drive voltages from 1.8V to 4.5V and operates up to a maximum junction temperature of 150°C, with a maximum power dissipation of 1W. This MOSFET is commonly utilized in consumer electronics, portable devices, and power management applications. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs70mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package3-CPH
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds405 pF @ 6 V

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