CPH3341-TL-E
MOSFET P-CH 30V 5A 3CPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi CPH3341-TL-E is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 5A at 25°C, with a maximum power dissipation of 1.2W (Ta). The device exhibits a low on-resistance of 45mOhm at a drain current of 2.5A and a gate-source voltage of 10V. Key electrical characteristics include a maximum gate charge of 21.8 nC at 10V and an input capacitance of 1115 pF at 10V. Mounted in a compact 3-CPH (SC-96) surface mount package, this MOSFET is suitable for use in power management circuits within the consumer electronics and industrial automation sectors. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-CPH |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1115 pF @ 10 V |
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